ZnSe-based laser structures grown on GaAs(001) substrates were studied by high resolution X-ray diffraction. Extended diffuse scattering observed in reciprocal space

maps was found to be caused by misfit dislocations located at the interface between the p-type doped ZnSSe spacer on top of the p-type cladding layer and the subsequent ZnSe layer. Linear densities of dislocations were estimated by simulations.

Studies of Misfit Dislocation Densities in II-VI Laser Structures by Diffuse X-Ray Scattering. G.Alexe, H.Heinke, M.Klude, V.Kaganer, D.Hommel: Physica Status Solidi B, 2002, 229[1], 193-6

Figure 7

Thermal Diffusivity of Cr2+ in ZnSe

(Filled circles: sputtered Cr & single crystal, open circles: sputtered Cr & window material, filled squares: Cr powder & single crystal, open squares: Cr powder & window material)