Cathodoluminescence defectoscopy was applied to the micro-characterization of commercial wide-band-gap II¯VI semiconductors as well as to the thin diffusion layers formed in these materials during annealing. The luminescence topography of the radiative centre distributions for various Al and Bi concentrations was investigated, and a model for the two-polar and dissociative diffusion of Zn, Al and Bi from the melt to the bulk crystal was proposed.

Cathodoluminescence Defectoscopy of ZnS and ZnSe Crystals. M.V.Nazarov: Materials Science and Engineering B, 2002, 91-92, 349-52. See also: Physica Status Solidi B, 2002,