Microstructural changes after electron and proton irradiation, and the evolution of radiation-induced defects during isochronal annealing, were considered. Nominally undoped samples were irradiated with 1 or 2MeV electrons or with 3MeV protons, and the effects were investigated by using positron lifetime and Doppler-broadening measurements.

Induced Defects in ZnSe and ZnTe by Electron and Proton Irradiation and Defect-Annealing Behaviour. W.Puff, S.Brunner, A.G.Balogh, P.Mascher: Physica Status Solidi B, 2002, 229[1], 329-32