Epilayers of ZnSe were grown onto a GaAs substrate by hot wall epitaxy. After the ZnSe epilayers were treated in the vacuum, Zn- and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of low-temperature photoluminescence measurement. The dominant peaks at 2.7988 and 2.7937eV obtained from the photoluminescence spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton. I2 (D°, X), bounded to the neutral donor associated with the Se vacancy. This donor-impurity binding energy was calculated to be 0.0253eV. The exciton peak, I1d, at 2.7812eV was confirmed to be bound to the neutral acceptor which corresponded with the Zn vacancy. The I1d peak was predominantly observed in the ZnSe/GaAs:Se epilayer treated in the Se-atmosphere. This Se-atmosphere treatment may convert the ZnSe/GaAs:Se epilayer into the p-type. The Se-atmosphere peak was found to be related to a complex donor like a (VSe¯VZn)¯VZn.Point Defects of ZnSe Epilayers Grown by Hot Wall Epitaxy. K.J.Hong, S.H.You, T.S.Jeong, C.J.Youn, M.S.Hong, J.S.Park, C.S.Park: Journal of Crystal Growth, 2002, 240[1-2], 57-63