ZnSe epilayers doped with plasma-activated P were investigated by means of optical and electrical measurements. It was found that PSe forms a shallow acceptor with binding energy of 0.085eV which was identified in the optical emission spectra. In these samples an energy level near to 0.09eV from the valence band was also observed by using deep level transient spectroscopy. It was attributed to the PSe acceptor which had been identified in photoluminescence. Also, deeper levels were observed with binding energies up to 0.45eV. Some of them were metastable and give rise to persistent photoconductivity.

Self-Compensation of the Phosphorus Acceptor in ZnSe. D.Seghier, H.P.Gislason, C.Morhain, M.Teisseire, E.Tournié, G.Neu, J.P.Faurie: Physica Status Solidi B, 2002, 229[1], 251-5