Variations of diffusion migration in semiconductor crystals under the influence of mechanical stresses were investigated. Modeling of heat-transfer in semiconductors has an independent sense and also was essential for description of processes in Si under the temperature gradient fields. A case of homogeneous mechanical stresses by numerical experiments was analyzed. The temporal evolution of diffusion concentration profiles of impurity-doped substrate was studied under the influence of different mechanical stresses.

Numerical Modelling of the Pulse Heat-Transfer and Impurities Diffusion under Mechanical Stresses in Semiconductor Crystals. L.Monastyrskii, I.Olenych, P.Parandii: Journal of Crystal Growth, 2001, 230[1-2], 314-7