Beams of radioactive ions implanted in semiconductors provide a unique means of establishing the chemical identity of point defects and of exploring the evolution of defects through several chemical species. Results obtained for samples of Si implanted with either 193Hg or 197Hg were reported. The defects produced were studied using photoluminescence. In addition to the defects involving only Hg or its daughters, more complex defects containing Li were also created and studied as the radioactive heavy element constituents decayed. A new defect was identified which contained one Hg atom and another involving Li and two Au atoms.

The Evolution of Point Defects in Semiconductors Studied using the Decay of Implanted Radioactive Isotopes. M.O.Henry, E.McGlynn, J.Fryar, S.Lindner, J.Bollmann: Nuclear Instruments and Methods in Physics Research B, 2001, 178[1-4], 256-9