The defect formation process in vitreous chalcogenide semiconductors of the ternary As¯Ge¯S system, induced by 60Co γ-irradiation with 2.82MGy absorbed dose, was studied using positron annihilation lifetime method. The measured results were explained in terms of a modified model of coordination topological defects with associated open

volume micro-voids, described by radiation-structural transformations at the level of both short- and medium-range ordering.

Radiation-Induced Defects in Vitreous Chalcogenide Semiconductors Studied by Positron Annihilation Method. O.Shpotyuk, J.Filipecki: Materials Science and Engineering B, 2002, 91-92, 537-40