Ultra-fast transient reflecting grating spectroscopy was applied to investigate the influence of various defect states on ultra-fast carrier dynamics of up to 3ps duration in an ion-implanted Si surface region. The transient reflecting grating spectra revealed the energy-state distribution of two kinds of defect states, and it was observed that photo-excited carriers were trapped in each state depending on annealing time. It was proposed that transient reflecting grating spectroscopy could be used as an analytical method for characterizing defects in the surface region of semiconductors.

Transient Reflecting Grating Spectroscopy for Defect Analysis of Surface Region of Semiconductors. H.Donen, K.Katayama, T.Sawada: Journal of Applied Physics, 2002, 92[3], 1367-71