The nitridation of GaAs, InAs, and InSb by low-energy N2+ ion bombardment at room temperature was studied by means of near-edge X-ray absorption fine structure and X-ray photoelectron spectroscopy measurements. The formation of thin surface nitride layers, consisting mostly of GaN or InN but also containing minor amounts of mixed nitrides, was observed. Besides the nitride-related features, sharp peaks in the near-edge X-ray absorption fine structure due to π* resonance at 401.0eV and correlated peaks at 403.8eV in N 1s core level spectra were detected. Both spectral features could be assigned to the presence of interstitial N, most likely molecular N. It was found that the amount of interstitial N in the surface layer strongly depends on the AIII–BV semiconductor system and may be affected by modification of the conditions during low energy ion bombardment.

Interstitial Nitrogen Induced by Low-Energy Ion Beam Nitridation of AIII–BV Semiconductor Surfaces. J.D.Hecht, F.Frost, D.Hirsch, H.Neumann, A.Schindler, A.B.Preobrajenski, T.Chassé: Journal of Applied Physics, 2001, 90[12], 6066-9