To simulate transient enhanced diffusion of dopants after ion implantation, a very accurate model for the interaction of self–interstitials with extended defects was indispensable. Recently, such a model was published by Cowern including the formation of {113} defects via small self–interstitial clusters. Extracted from experimental results, this continuum model consists of a large set of coupled differential equations and, consequently, simulation times were rather high. A model was presented here which was based on only 7 differential equations leading to almost identical results in comparison to those of the original model. The reduction obtained will allow the application of the clustering model for the simulation of transient enhanced diffusion in commercial software tools.

A Reduced Approach for Modelling the Influence of Nanoclusters and {113} Defects on Transient Enhanced Diffusion. D.Stiebel, P.Pichler, N.E.B.Cowern: Applied Physics Letters, 2001, 79[16], 2654-6