Using a plane wave basis, the Schrödinger equation of the envelope function was solved numerically for the case of dislocation strain field binding potentials (deformation and piezoelectric coupling). Shallow 1-dimensional bands were found for both electrons and holes, characterized by larger binding energies than those previously found by approximated analytical methods, 1-dimensional dislocation bands have also been computed and showed a splitting of light and heavy hole bands resulting into four distinct bands.

Numerical Determination of Shallow Electronic States Bound by Dislocations in Semiconductors. J.L.Farvacque, P.François: Physica Status Solidi B, 2001, 223[3], 635-48