The defect chemistry and direct-current transport characteristics of the β-phase were analyzed by taking account of 4 factors. These were 2 structurally different interstitial positions, short-range interactions via associations, anisotropy of the wurtzite structure, long-range defect-defect interactions via Coulomb forces and the formation of highly conducting layers perpendicular to the c-axis. The latter involved a disordered interface structure with stacking faults. The analysis also took account of the ionic conductivity, as measured using impedance spectroscopy with both conventional and micro-electrodes, and of previous data on defect concentrations and defect energies (as estimated by means of molecular dynamics simulations). Static valence sum calculations were used to deduce ion conduction pathways and the related migration barriers.

Defect Chemistry and Transport Characteristics of β-AgI. J.S.Lee, S.Adams, J.Maier: Journal of Physics and Chemistry of Solids, 2000, 61[10], 1607-22