Recombination processes in the X-ray storage phosphor, BaBr2:Eu2+, were investigated by using optical and magneto-optical methods. A structure-sensitive investigation of the defects involved in recombination was performed by detecting microwave-induced changes in the recombination luminescence in a high magnetic field. It was noted that F centers as well as VK hole centers were created after X-irradiation at low temperatures. A low-energy recombination band which peaked at about 460nm was attributed to F–VK center recombination, whereas high-energy bands at 282 and 315nm were attributed to the recombination of self-trapped excitons.

Radiation-Induced Defects and their Recombination Processes in the X-Ray Storage Phosphor BaBr2:Eu2+. M.Secu, S.Schweizer, U.Rogulis, J.M.Spaeth: Journal of Physics - Condensed Matter, 2003, 15[12], 2061-70