The creation of defects in Pb-doped crystals, by ultra-violet radiation at 4.2K, was investigated by using thermally stimulated and optically stimulated luminescence methods. The origin of the optically created defects was established. The dependences of the defect creation efficiency upon the irradiation energy and time, upon the uniaxial stress and upon the concentration of the impurity ions (Pb2+, Na+) were found. The charge-transfer processes which took place in the Pb2+-related absorption bands under irradiation of Pb-doped crystals, and resulted in the appearance of self-trapped and localized exciton luminescences and in defect creation, were explained.

Defect Creation under UV Irradiation of CsI:Pb Crystals in Pb2+-Induced Absorption Bands Investigated by Luminescence Methods. V.Babin, K.Kalder, A.Krasnikov, M.Nikl, K.Nitsch, S.Zazubovich: Physica Status Solidi B, 2002, 234[2], 689-700