The defects created by the ultra-violet irradiation (5.8 to 4.8eV energy) of Tl-doped crystals at 4.2K were studied. Thermally stimulated luminescence peaks appeared near to 60, 90 and 125K, and recombination luminescence photo-stimulation bands peaked at 2.35, 1.92, 1.33 and 0.89eV. The processes were considered which were responsible for the appearance of an intense visible (2.55 and 2.25eV) luminescence of excitons localized near to Tl+ ions, and for the creation of defect pairs of Tl0-VK and Tl+-VK type with various distances between the components.

Luminescence and Defect Creation under Photo-Excitation of CsI:Tl Crystals in Tl+-Related Absorption Bands. V.Babin, K.Kalder, A.Krasnikov, S.Zazubovich: Journal of Luminescence, 2002, 96[1], 75-85