Slow positron implantation spectroscopy was used to study surface, and near-surface, defect profiles following implantation with 100keV Ar ions to fluences ranging from 1013 to 1016/cm2. The S-parameter was used to characterize the radiation damage as a function of depth, and the spatial extent of the defect distribution was estimated by computer. The greatest lattice damage was shown to occur at an incident positron energy of 4.0keV, for low doses, and by one of 5.0keV for high doses. This energy corresponded to a sample depth of about 200nm.

Characterization of Defects in LiF Implanted with Ar+ using Variable Energy Positron Beam. E.J.Sendezera, A.T.Davidson, P.T.Jili, M.L.Chithambo, W.Anwand, G.Brauer, E.H.Nicht: Nuclear Instruments and Methods in Physics Research B, 2002, 192[1-2], 202-5