The free path lengths of ensembles of edge and screw dislocations, in the stress field of a concentrated load, were studied in γ-irradiated crystals. The relative mobilities of edge and screw dislocations were found to depend greatly upon the irradiation dose and temperature. The results were explained in terms of an additional retardation of screw dislocations by dislocation debris that appeared during double cross-slip.

Mobility of Edge and Screw Dislocations in γ-Irradiated LiF Crystals. R.P.Zhitaru, T.S.Durum: Physics of the Solid State, 2004, 46[2], 272-6