A study was made of the ion-dose dependence of the concentration of F2 and F3+ active defects in He+-implanted crystals. Both absorbed at about 450nm, and separately emitted in the visible range. Quantitative data were obtained from transmission measurements by fitting them using a specially developed theoretical model. They were then compared with photoluminescence spectra. A qualitative agreement between them confirmed the validity of the theoretical approach, which was therefore a simple means for investigating these active defects.

Concentration of F2 and F3+ Defects in He+-Implanted LiF Crystals Determined by Optical Transmission and Photoluminescence Measurements. F.Bonfigli, B.Jacquier, R.M.Montereali, P.Moretti, V.Mussi, E.Nichelatti, F.Somma: Optical Materials, 2003, 24[1-2], 291-6