The formation of F-centers by monochromatic X-rays was studied, above and below the Br and Rb K-absorption edges. An X-ray beam, from a double Si crystal monochromator on an undulator, was used to produce the point defects. They were then detected by using a laser-induced luminescence method. Experiments were carried out using a wide range of monochromatic X-ray intensities. There was an almost linear initial slope of defect formation as a function of exposure. No significant increase in F-center formation efficiency was found upon crossing the Br K-edge. This indicated that Auger-cascade mechanisms did not add greatly to the usual multiple ionization electron-hole recombination processes which generated point defects.

Spectral Dependence of Point Defect Production by X-Rays in RbBr. F.C.Brown, S.M.Heald, D.T.Jiang, D.L.Brewe, K.H.Kim, E.A.Stern: Physical Review B, 1999, 60[10], 7037–42