Embedded-atom method potentials and atomistic models of coherent (010) interfaces were used to study slip across the interfaces in cube-on-cube oriented Cu/Ni nanolayered materials. It was found that (111) disconnections formed during slip across the Cu/Ni interfaces, and became appreciable barriers to continued deformation. A significant barrier existed for a flat coherent interface, due to large coherency stresses in the layers that had to be overcome by applied stresses. When these were overcome, interface transection easily occurred. A disconnection represented an additional barrier, because of a residual dislocation with a Burgers vector magnitude that was equal to the difference between bCu and bNi. This barrier depended upon the position of the disconnection relative to the glide plane of the transecting glide dislocation, and upon the disconnection height. The disconnections caused a work-hardening that prevented shear-band formation during deformation, and encouraged homogeneous shear processes. The disconnection energies were shown to be relatively small, and to depend upon the disconnection type and size.

Interactions of Dislocations with Disconnections in FCC Metallic Nanolayered Materials. C.H.Henager, R.J.Kurtz, R.G.Hoagland: Philosophical Magazine, 2004, 84[22], 2277-303