The effects of H upon the cross-slip of a dissociated screw dislocation were studied by means of atomistic simulations, using a configuration-space path technique. It was found that H binding in the stacking fault had no effect upon the activation energy for cross-slip. The H that was bound to the cores of the partial dislocations, and moved with the dislocations during cross-slip, led to an increase in the activation energy and thus induced slip planarity. The latter was due only to a net decrease in the H-binding energy in the cross-slip process.

Hydrogen-Affected Cross-Slip Process in FCC Nickel. M.Wen, S.Fukuyama, K.Yokogawa: Physical Review B, 2004, 69[17], 174108 (6pp)