The transformation of Pd/Si into Pd2Si/Si was investigated by using depth-resolved positron annihilation, X-ray diffraction and Auger electron spectroscopy studies. The observed defect-sensitive positron S-parameter value of 1.022–1.054 indicated the existence of divacancies across the silicide/Si interface and Si substrate region. The experimental observations of vacancy defects were consistent with the model proposed for excess vacancy generation across the interface as a result of Si diffusion.

Evidence for Excess Vacancy Defects in the Pd–Si System - Positron Annihilation, X-Ray Diffraction and Auger Electron Spectroscopy Study. S.Abhaya, G.Amarendra, G.L.N.Reddy, R.Rajaraman, G.V.Rao, K.L.Narayanan: Journal of Physics - Condensed Matter, 2003, 15[46], L713-9