A theoretical model was proposed for describing the evolution of an ensemble of vacancies and interstitial atoms, and its effect upon solid-phase amorphization in crystalline thin films during irradiation. Kinetic equations were derived for point defects in irradiated thin films in the absence of ion implantation. The temperature dependence of the radiation dose required, for the onset of solid-phase amorphization, was calculated by using numerical solutions of the kinetic equations.

Kinetics of Point Defects and Amorphization in Thin Films under Irradiation. I.A.Ovidko, A.B.Reĭzis: Physics of the Solid State, 2003, 45[9], 1679-82