Electron microprobe methods were used to study the diffusion of Si in thin-films at 475 to 550C. The results could be described by:
D (cm2/s) = 8.3 x 10-3 exp[-0.81(eV)/kT]
A.Paccagnella, G.Ottaviani, P.Fabbri, G.Ferla, G.Queirolo: Thin Solid Films, 1985, 128[3-4], 217-23
Table 29
Triple Product at 553K for Zn Diffusion through Tilt Grain Boundaries in Al
Tilt Axis: <111>
Tilt Angle (º) | Pressure (MPa) | sδD (m3/s) |
38 | 0.1 | 1.85 x 10-20 |
38 | 0.4 | 1.9 x 10-20 |
38 | 600 | 9.4 x 10-21 |
38 | 1200 | 5.5 x 10-21 |
39 | 0.1 | 2.35 x 10-20 |
39 | 0.4 | 3.3 x 10-20 |
39 | 300 | 1.3 x 10-20 |
39 | 600 | 1.3 x 10-20 |
39 | 900 | 1.1 x 10-20 |
39 | 1200 | 1.1 x 10-20 |
43 | 0.1 | 2.15 x 10-20 |
43 | 0.4 | 3.41 x 10-20 |
43 | 300 | 1.7 x 10-20 |
43 | 600 | 1.8 x 10-20 |
43 | 900 | 1.8 x 10-20 |
43 | 1200 | 8.6 x 10-21 |