The temperature dependence of 113Sn which had been implanted into single crystals was studied, at temperatures ranging from 650 to 905K, by using a serial sectioning technique. The results could be described by:

D (m2/s) = 8.4 x 10-5 exp[-118.6(kJ/mol)/RT]

G.Erdélyi, G.Freitag, H.Mehrer: Philosophical Magazine A, 1991, 63[6], 1167-74