The annealing behavior of implanted Si in amorphous C films, deposited by using a pulsed-arc discharge method, was studied. Raman spectroscopy was used to characterize changes in the bonding structure after annealing. The concentration profiles in Si-doped material were measured by using secondary ion mass spectrometry. The resultant data could be described by:

D (nm2/s) = 1.9 x 104 exp[-1.6(eV)/kT]

E.Vainonen-Ahlgren, T.Ahlgren, L.Khriachtchev, J.Likonen, S.Lehto, J.Keinonen, C.H.Wu: Journal of Nuclear Materials, 2001, 290-293, 216-9