Resonance broadening and tracer methods were used to study the diffusion of 30Si at 650 to 900C. The results could be described by:
D (cm2/s) = 2.4 x 10-1 exp[-2.9(eV)/kT]
J.Räisänen, J.Hirvonen, A.Anttila: Solid State Electronics, 1981, 24[4], 333-6
Table 69
Diffusivity of Sn in Ge
Temperature (C) | Method | D (cm2/s) |
930 | gas phase | 2.22 x 10-11 |
900 | gas phase | 8.92 x 10-12 |
875 | gas phase | 3.73 x 10-12 |
850 | gas phase | 1.89 x 10-12 |
825 | gas phase | 8.32 x 10-13 |
800 | gas phase | 4.28 x 10-13 |
775 | gas phase | 1.71 x 10-13 |
750 | gas phase | 6.92 x 10-14 |
725 | gas phase | 1.95 x 10-14 |
700 | gas phase | 1.33 x 10-14 |
650 | gas phase | 1.57 x 10-15 |
615 | gas phase | 2.72 x 10-16 |
555 | gas phase | 1.19 x 10-17 |
900 | thin film | 7.84 x 10-12 |
750 | thin film | 6.57 x 10-14 |
700 | thin film | 1.12 x 10-14 |