The diffusion of Sb was determined by measuring profiles using Rutherford back-scattering techniques. Computer-fitting was used to determine the standard deviation of the width of the Sb profile. These results showed that this was a good parameter for monitoring the various diffusion processes. Analysis showed that, in a first annealing stage of implanted Sb, diffusion was relatively slow. There was evidence that some form of segregation of the Sb occurred which was most pronounced during prolonged isothermal annealing at 350C. A second rapid annealing stage was accompanied by an equally rapid diffusion of Sb. In the case of isochronal annealing, the activation energy for diffusion was deduced to be 2.0eV. This was considered to be compatible with a vacancy diffusion mechanism. In the case of ion-beam annealing, there was a considerable enhancement of the principal Sb diffusion process. This was considered to be directly related to the vacancies that were produced by high-energy irradiation.

A.Belattar, G.A.Stephens, P.D.Cardwell: Nuclear Instruments and Methods in Physics Research B, 1995, 101[4], 388-93

Table 98

Grain Boundary Diffusion of S in Ni