The damage which was produced by the direct-current plasma doping of B was studied. The damage density was measured by using 1.5MeV He+ Rutherford back-scattering spectrometry and photo-acoustic displacement techniques. These results showed that less damage due to doping could be achieved by plasma doping as compared with that produced by ion implantation. Impurity diffusion also did not occur as rapidly here, as in the case of B+ and BF2+ implantation. The B diffusion coefficient could be as low as 4.9 x 10-15cm2/s at 950C after plasma doping. This value was 5 and 40 times lower than in the cases of B+ and BF2+ implantation, respectively. It was found that there was a correlation between the diffusion coefficient and the damage density.

T.Hara, K.Shinada, S.Nakamura: Japanese Journal of Applied Physics 1, 1994, 33[10], 5608-11