The depth profiles of B in heterojunctions of amorphous hydrogenated Si and SiC were measured by means of nuclear reaction analysis. It was found that the B concentration in the Si layer depended markedly upon the substrate temperature. It was concluded that the diffusivity (table 140) of B during hydrogenated amorphous Si film growth was very high.
F.Zhang, D.He, Z.Song, G.Chen: Physica Status Solidi A, 1990, 118[1], K17-20
Table 141
Ambient Diffusion of B as a Function of B Dose, Si Dose, and Defect Concentration
B (/cm2) | Si (/cm2) | C (/cm3) | D (cm2/s) |
6 x 1013 | 0 | 5 x 1018 | 4 x 10-13 |
6 x 1013 | 6 x 1013 | 1.8 x 1020 | 1 x 10-12 |
6 x 1013 | 1 x 1014 | 2.3 x 1020 | 4 x 10-12 |
6 x 1013 | 6 x 1014 | - | 4 x 10-12 |
6 x 1014 | 0 | 5 x 1019 | 2 x 10-12 |
6 x 1014 | 6 x 1014 | - | 3.5 x 10-12 |
3.7 x 1015 | 0 | 1 x 1020 | 4 x 10-12 |
3.7 x 1015 | 6 x 1013 | 2.5 x 1020 | 4 x 10-12 |
3.7 x 1015 | 1 x 1014 | - | 4 x 10-12 |
3.7 x 1015 | 6 x 1014 | - | 4 x 10-12 |