Anomalously high levels of ion-implanted B diffusivity (table 141) during pulse annealing were attributed to the participation of interstitial Si atoms in the redistribution of migrating B atoms between interstitial and vacancy diffusion mechanisms. At B+ doses of more than 1015/cm2, the high values of B diffusivity were caused by the effect of incompatibility elastic stresses (table 142) that prevented the transition of dopant atoms into lattice sites.

V.F.Stelmakh, J.R.Suprun-Belevich, A.R.Chelyadinski: Physica Status Solidi A, 1989, 112[1], 381-4