Transient ion drift in depletion regions of a Schottky barrier was used to investigate diffusion in B- or Al-doped material (table 145). It was shown that, within the studied temperature range, Cu-B pairing was negligible. Excellent agreement with published diffusivity data was found for Cu ions, as described by the expression:
D (cm2/s) = 0.0045 exp[-0.39(eV)/kT]
A.Zamouche, T.Heiser, A.Mesli: Applied Physics Letters, 1995, 66[5], 631-3
Table 145
Diffusivity of Cu in Si
Temperature (C) | D (cm2/s) |
117 | 4.5 x 10-8 |
102 | 2.4 x 10-8 |
87 | 1.5 x 10-8 |
82 | 1.0 x 10-8 |
72 | 7.0 x 10-9 |
72 | 1.7 x 10-8 |
67 | 3.6 x 10-9 |
62 | 5.0 x 10-9 |
57 | 1.0 x 10-8 |
52 | 2.8 x 10-9 |
47 | 6.4 x 10-9 |
42 | 3.0 x 10-9 |
37 | 1.9 x 10-9 |
37 | 4.0 x 10-9 |
27 | 2.3 x 10-9 |
17 | 1.4 x 10-9 |
9 | 4.8 x 10-10 |