The diffusion parameters of Cu were determined in profiled Cu samples, that had been prepared by using the Stepanov method, at temperatures ranging from 900 to 1050C. It was found that the data (table 147) could be described by:

D(cm2/s) = 0.015 exp[-0.86(eV)/kT]

K.P.Abdurakhmanov, M.B.Zaks, V.V.Kasatkin, G.S.Kulikov, S.K.Persheev, K.K.Khodzhaev: Fizika i Tekhnika Poluprovodnikov, 1989, 23[10], 1891-3 (Soviet Physics - Semiconductors, 1989, 23[10], 1170-1)

Table 147

Diffusion of Cu in Si

Table 148

Diffusivity of Cu in Amorphous Si