Radioactive tracer techniques and X-ray photoelectron spectroscopy were used to study diffusion in films of hydrogenated amorphous material at temperatures of between 200 and 500C. The films were P-doped and had various defect structures. The migration rate and the diffusion coefficient were found to depend upon the defect structure. When Fe diffusion was measured at temperatures of between 350 and 450C (table 153), the coefficients decreased with increasing P content.

V.K.Kudoyarova, G.S.Kulikov, E.I.Terukov, K.K.Khodzaev: Journal of Non-Crystalline Solids, 1987, 90, 211-4

Table 153

Diffusion of Fe in Amorphous Hydrogenated Si