A quantitative study was made of the charge-state dependent local motion of H around C in Si by directly measuring the recovery of a stress-induced alignment of a H-C complex by means of deep-level transient spectroscopy under an uniaxial stress. It was found that H jumped (in the electron-empty charge state), from a bond-centered site between C and Si atoms to another one, as described by an activation energy of 1.33eV and a frequency factor of 7.1 x 1014/s. The H jumped much faster in the electron-occupied charge state, giving an activation energy of 0.55eV and a frequency factor of 3.3 x 106/s. It was concluded that the H-C complex captured an electron from the conduction band at its gap state with anti-bonding character, thus lowering the activation barrier and frequency factor for H motion in the electron-occupied charge state.

Y.Kamiura, K.Fukuda, Y.Yamashita, T.Ishiyama: Physical Review B, 2002, 65[11], 113205 (4pp)

 

Table 157

Diffusivity of Various H Species in n-Type and p-Type Si

 

Species

Type

T (C)

D (cm2/s)

Ho

p

185

5.0 x 10-12

Ho

p

185

3.6 x 10-12

Ho

p

185

4.0 x 10-12

Ho

p

165

7.5 x 10-13

Ho

p

150

3.6 x 10-13

Ho

p

150

3.5 x 10-13

Ho

p

145

2.5 x 10-13

Ho

p

120

4.0 x 10-14

H+

p

185

3.0 x 10-11

H+

p

185

1.0 x 10-12

H+

p

185

1.3 x 10-14

H+

p

165

1.3 x 10-11

H+

p

150

8.0 x 10-12

H+

p

150

5.5 x 10-13

H+

p

145

6.0 x 10-13

H+

p

120

2.5 x 10-12

Ho

n

120

4.0 x 10-14

Ho

n

150

3.6 x 10-13

H-

n

150

4.0 x 10-12

H-

n

120

7.5 x 10-13

H-

n

120

1.0 x 10-13

H-

n

120

5.0 x 10-15