The incorporation of H was studied under various electrochemical conditions, including anodization in fluoride solutions (where porous Si formed). The results suggested that there was a large near-surface H concentration, while simulations showed that the maximum penetration depth was governed by the volume diffusion of H and by material removal. The diffusion coefficients were found to depend upon the electrochemical conditions, and ranged from 10-13 to 10-11cm2/s.

P.Allongue, C.H.De Villeneuve, L.Pinsard, M.C.Bernard: Applied Physics Letters, 1995, 67[7], 941-3

 

Table 163

Diffusivity of H in Doped Amorphous Si

 

B

P

T (C)

D (cm2/s)

0.01

-

272

9.7 x 10-14

0.01

-

201

1.7 x 10-15

0.001

-

301

1.4 x 10-13

0.001

-

255

1.2 x 10-14

0.001

-

156

3.0 x 10-17

0.0001

-

273

1.4 x 10-14

0.0001

-

199

1.5 x 10-16

0.001

0.0001

272

2.5 x 10-15

0.001

0.0001

200

3.2 x 10-17

-

0.001

300

2.8 x 10-15

-

0.001

201

2.0 x 10-17

-

0.0001

272

6.1 x 10-16

-

0.0001

199

6.6 x 10-18

-

0.00001

272

2.0 x 10-16

-

0.00001

240

3.7 x 10-17