Experiments were performed in which H was injected by using various techniques, and was detected via the neutralization of B acceptor sites. Wet chemical etching injected protons to a depth of several microns within a few seconds. The results suggested that a lower limit on the diffusivity of H at 300K was about 2 x 10-11cm2/s. This value was in reasonable agreement with published permeation data.

C.H.Seager, R.A.Anderson, J.K.G.Panitz: Journal of Materials Research, 1987, 2[1], 96-106

Table 172

Diffusivity of H in Si