The real-time detection of H motion and bonding was carried out by using capacitance-voltage profiling of various Schottky and metal-insulator capacitors during low-energy H-ion beam injection into the barrier metallization. Numerical modelling indicated that an appreciable fraction of the H interstitials were positively charged, and that bonding of these species with charged B acceptors involved the large cross-section which was to be expected of a Coulomb capture process. The H diffusivity (table 173) at 300K was about 10-10cm2/s. This value was consistent with extrapolations of high-temperature diffusivity data.

C.H.Seager, R.A.Anderson: Applied Physics Letters, 1988, 53[13], 1181-3

Table 173

Diffusivity of H in Si