Experimental data, which revealed the essential features of atomic H that had been incorporated from various sources at low temperatures, were presented. Appropriate conditions for hydrogenation were chosen, and the H diffusivity (table 175) was found to be described by:

D(cm2/s) = 0.00002 exp[-0.49(eV)/kT]

S.V.Koveshnikov, S.V.Nosenko, E.B.Yakimov: Physica Status Solidi A, 1990, 120[2], 391-5

 

Table 176

Diffusion of H in n-type Si

 

Temperature (K)

D (cm2/s)

225

8.1 x 10-14

200

1.2 x 10-14

195

5.9 x 10-15

177

6.0 x 10-15

170

1.4 x 10-15

158

1.1 x 10-15

149

4.5 x 10-16

141

1.0 x 10-15

134

4.1 x 10-16

110

1.4 x 10-16

89

5.5 x 10-17

72

1.0 x 10-17

50

1.7 x 10-18

 

 

Figure 36

Meyer-Neldel Relationship for H Diffusion in Si

(circles: microcrystalline material, triangles: polycrystalline material)