Wafers were amorphized by implanting 2 x 1015 or 3 x 1017cm2 of Ar+ ions, and were then implanted with 400keV Hg+ ions to a dose of 4 x 1015/cm2. The diffusion and evaporation of the implanted Hg, and the recrystallization of the Hg-implanted amorphous material, were studied at temperatures ranging from 700 to 1000C by using MeV He ion Rutherford back-scattering/channelling techniques. It was found that, at 700C, thermal diffusion predominated and there was no loss of implanted Hg in amorphous material which had been implanted to 2 x 1015/cm2. The diffusion coefficient was deduced to be 7.8 x 10-15cm2/s. At temperatures above 800C, evaporation predominated. At 1000C, the implanted Hg disappeared. Recrystallization was also observed. In the case of samples which had been implanted with 3 x 1017 Ar+/cm2, when annealed at 700C, 87% of the implanted Hg was lost and, at 800C, the Hg entirely disappeared. The remaining Ar segregated towards the surface and the amorphous/crystalline interfaces.

K.M.Wang, S.Ma, B.R.Shi, H.Y.Zhai, X.D.Liu, J.T.Liu, X.J.Liu: Solid State Communications, 1995, 93[2], 155-8