Deep levels which were related to Mn, in n-type and p-type material, were studied by means of deep-level transient spectroscopy and Hall effect measurements. Two electron traps, at Ec - 0.12eV and Ec - 0.41eV, and a hole trap, at Ev + 0.32eV, were found in the Mn-doped material. The energy levels of these traps corresponded to transitions between 4 charge states (Mn-, Mno, Mn+, Mn2+) of interstitial Mn. An additional donor-type electron trap, at Ec - 0.51eV, was detected in n-type samples, and the trap was attributed to substitutional Mn. An electron trap at Ec - 0.50eV was observed in n+p junction samples which had been diffused with Mn in B-doped p-type material. This trap was attributed to a Mn-B complex which was formed via a pairing reaction between interstitial Mn and substitutional B. By studying this pairing reaction, it was found that the diffusivity of interstitial Mn at temperatures of between 14 and 90C (table 180) could be described by:

D(cm2/s) = 0.0024 exp[-0.72(eV)/kT]

H.Nakashima, K.Hashimoto: Journal of Applied Physics, 1991, 69[3], 1440-5

Table 180

Diffusivity of Mn in Si