The effect of doping-type, Sb, As and B upon O out-diffusion from heavily-doped Czochralski-type wafers was investigated by using secondary ion mass spectroscopy (table 183). The results indicated that, although O diffusion was retarded in heavily B- and As-doped wafers during 800C annealing, it was not affected by heavy Sb-doping. This indicated that charge effects and atomic size effects had a negligible effect upon O diffusion. The B and As diffusion retardation effects were attributed to the existence of dopant-O complexes. The O solubility was highest in the most heavily B-doped samples when annealed at low temperatures.
T.Ono, G.A.Rozgonyi, E.Asayama, H.Horie, H.Tsuya, K.Sueoka: Applied Physics Letters, 1999, 74[24], 3648-50
Table 183
Out-Diffusion Coefficients for O in Si
O (/cm3) | Dopant | Concentration (/cm3) | Temperature (C) | D (cm2/s) |
1.58 x 1018 | B | 1.8 x 1015 | 800 | 2.45 x 10-13 |
1.58 x 1018 | B | 1.8 x 1015 | 1050 | 3.9 x 10-11 |
1.13 x 1018 | B | 9.2 x 1017 | 800 | 2.44 x 10-13 |
1.13 x 1018 | B | 9.2 x 1017 | 1050 | 4.5 x 10-11 |
1.11 x 1018 | B | 8.0 x 1018 | 800 | 6.8 x 10-14 |
1.08 x 1018 | B | 1.2 x 1019 | 800 | 4.5 x 10-14 |
1.08 x 1018 | B | 1.2 x 1019 | 1050 | 3.9 x 10-11 |
1.52 x 1018 | Sb | 5.0 x 1017 | 800 | 2.45 x 10-13 |
1.52 x 1018 | Sb | 5.0 x 1017 | 1050 | 3.9 x 10-11 |
1.95 x 1018 | As | 1.1 x 1019 | 800 | 1.0 x 10-13 |
1.95 x 1018 | As | 1.1 x 1019 | 1050 | 4.5 x 10-11 |