The diffusivity of O at temperatures of between 500 and 650C was measured directly for the first time by using microprobe techniques. It was found that the O diffusivity within this temperature range was enhanced, relative to the normal diffusivity of interstitial O. The degree of enhancement increased with decreasing temperature, and the enhancement factor reached a value of more than 100 at temperatures below 550C. The diffusivity at temperatures of between 550 and 750C varied by up to an order of magnitude between wafers (table 189). The O diffusivity generally decreased with increasing annealing time, but was not proportional to the O concentration.
S.T.Lee, P.Fellinger, S.Chen: Journal of Applied Physics, 1988, 63[6], 1924-7
Table 189
Diffusivity of O in Si Wafers
Orientation | Resistivity (cm) | T (C) | D (cm2/s) |
(111) | 10-20 | 500 | 4.3 x 10-14 |
(111) | 10-20 | 700 | 4.3 x 10-14 |
(111) | 10-20 | 900 | 1.5 x 10-12 |
(111) | 10-20 | 1000 | 1.1 x 10-11 |
(100) | 3 | 650 | 1.4 x 10-14 |
(100) | 3 | 800 | 2.1 x 10-13 |
(100) | 3 | 1000 | 1.2 x 10-11 |
(100) | 1-2 | 500 | 4.2 x 10-14 |
(100) | 1-2 | 700 | 4.1 x 10-14 |
(100) | 1-2 | 1000 | 1.1 x 10-11 |
(100) | 8-16 | 500 | 2.3 x 10-14 |
(100) | 8-16 | 700 | 1.5 x 10-14 |
(100) | 8-16 | 1000 | 1.1 x 10-11 |
(100) | 9 | 550 | 1.4 x 10-14 |
(100) | 9 | 700 | 4.4 x 10-14 |
(100) | 9 | 1000 | 1.2 x 10-11 |
(100) | 10-20 | 600 | 5.6 x 10-15 |
(100) | 10-20 | 800 | 2.1 x 10-13 |
(100) | 10-20 | 1000 | 1.2 x 10-11 |
(100) | 16 | 550 | 2.6 x 10-14 |
(100) | 16 | 700 | 4.1 x 10-14 |
(100) | 16 | 1000 | 1.2 x 10-11 |