The intrinsic diffusion of P in high-purity epitaxial Si films was studied (figure 37). The P diffusion at 810 to 1100C could be described by:

D (cm2/s) = 8 x 10-4 exp[-2.74(eV)/kT]

These results differed from those of many previous studies, but this deviation could, to a large extent, be attributed to slow transients before equilibrium concentrations of point defects were established below about 1000C.

J.S.Christensen, H.H.Radamson, A.Y.Kuznetsov, B.G.Svensson: Applied Physics Letters, 2003, 82[14], 2254-6

Table 192

Diffusivity Enhancement or Retardation for P in Si