The diffusion of donor elements in fine-grained and coarse-grained polycrystalline material was studied at temperatures ranging from 900 to 1150C (table 193). Tracers (32P) were used to determine the concentration/depth profiles via sectioning. By means of autoradiography, the lateral distribution of the radiotracers over the sample surface was revealed.

F.H.M.Spit, H.Bakker: Physica Status Solidi A, 1986, 97[1], 135-42

 

Table 193

Diffusivity of P in Si

 

T (C)

D (cm2/s)

1000

3.9 x 10-14

950

1.1 x 10-14

900

3.0 x 10-15