Diffusion in monocrystalline Si and in a Si-TaSi2 eutectic alloy was investigated, using a P concentration of about 1019/cm3, at temperatures ranging from 767 to 1227C (table 195). No clear difference could be found between P diffusion in the eutectic structure and in the Si. A non-linear Arrhenius plot was obtained, thus revealing P diffusion-enhancement at lower temperatures. The linear part could be described by:

D(cm2/s) = 5.7 exp[-3.75(eV)/kT]

J.Pelleg, B.M.Ditchek: Journal of Applied Physics, 1993, 73[2], 699-706

Table 195

Diffusivity of P in Si