The diffusivity of P in profiled samples of Stepanov-prepared material was studied at temperatures of between 1015 and 1210C by using radiotracer, neutron activation and serial sectioning methods. It was found that the results (table 197) could be described by the expression:

D(cm2/s) = 1.9 exp[-3.3(eV)/kT]

K.P.Abdurakhmanov, M.B.Zaks, V.V.Kasatkin, G.S.Kulikov, S.K.Persheev, K.K.Khodzhaev: Fizika i Tekhnika Poluprovodnikov, 1988, 22[11], 2088-90 (Soviet Physics - Semiconductors, 1988, 22[11], 1324-5)

Table 197

Diffusivity of P in Profiled Si