Radioactive tracer techniques and X-ray photoelectron spectroscopy were used to study diffusion in films of hydrogenated amorphous material at temperatures of between 200 and 500C. The films were P-doped and had various defect structures. The migration rate and the diffusion coefficient were found to depend upon the defect structure. The diffusivity at 200C was 10-16 cm2/s.

V.K.Kudoyarova, G.S.Kulikov, E.I.Terukov, K.K.Khodzaev: Journal of Non-Crystalline Solids, 1987, 90, 211-4