Layers (2nm) of Pt were incorporated into amorphous material by using a laser quenching technique. The samples were then analyzed by using Rutherford back-scattering spectrometry and channelling methods. It was found that the diffusivity was equal to 1.8 x 10-16cm2/s at 300C. Impurity diffusion in the amorphous material was found to be rapid at high concentrations, and very slow at low concentrations.

M.A.Harith, S.U.Campisano, J.M.Poate: Semiconductor Science and Technology, 1988, 3[9], 829-31